根據JEDEC發行的JEP 122: Failure Mechanisms and Models for Semiconductor Devices,半導體積體電路的失效模制(failure mechanism)為熱載子注入(hot carrier injection, HCI)時,
JEP 122A:2001 至 JEP 122C:2006:
4.4 Hot Carrier Injection (HCI)
N-channel model: Ea = - 0.1 eV to - 0.2 eV (NOTE. The apparent activation energy is negative)
P-channel model: Ea = - 0.1 eV to - 0.2 eV
JEP 122E:2009 至JEP 122G:2011
5.2 FEoL Failure Mechanisms - Hot Carrier Injection (HCI)
N-channel model: Eaa = - 0.1 eV to + 0.4 eV (NOTE. The apparent activation energy can be negative or positive depending on channel length and voltage)。
P-channel model: For L ≥ 0.25 µm,Eaa = - 0.1 eV to - 0.2 eV。
P-channel model: For L < 0.25 µm, Eaa = + 0.1 eV to + 0.4 eV。
JEP 122E的範例說明,辦公室用電子產品的溫度為 + 50 °C,試驗時採用 - 40 °C的低溫加速條件,則低溫加速因子為8倍。
JEP 122: Failure Mechanisms and Models for Semiconductor Devices